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Canadian Basic Exam Question Bank

effective 4/01/2007

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B-004-04: Field-effect transistor fundamentals

B-004-04-01: The two basic types of field effect transistors (FET) are:

N and P channel

NPN and PNP

germanium and silicon

inductive and capacitive



B-004-04-02: A semi-conductor having its leads labeled gate, drain, and source is best described as a:

field-effect transistor

gated transistor

bipolar transistor

silicon diode



B-004-04-03: In a field effect transistor, the ___________ is the terminal that controls the conductance of the channel.

gate

drain

source

collector



B-004-04-04: In a field effect transistor, the ___________is the terminal where the charge carriers enter the channel.

source

gate

drain

emitter



B-004-04-05: In a field effect transistor, the __________ is the terminal where the charge carriers leave the channel.

drain

collector

source

gate



B-004-04-06: Which semi-conductor device has characteristics most similar to a triode vacuum tube?

Field effect transistor

Junction diode

Zener diode

Bipolar transistor



B-004-04-07: The control element in the field effect transistor is the:

gate

source

drain

base



B-004-04-08: If you wish to reduce the current flowing in a field effect transistor, you could:

increase the reverse bias voltage

decrease the reverse bias voltage

increase the forward bias voltage

increase the forward bias gain



B-004-04-09: The source of a field effect transistor corresponds to the _______ of a bipolar transistor.

emitter

base

drain

collector



B-004-04-10: The drain of a field effect transistor corresponds to the _______ of a bipolar transistor.

collector

base

source

emitter



B-004-04-11: Which two elements in a field effect transistor exhibit fairly similar characteristics?

Source and drain

Source and gate

Gate and drain

Source and base





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